Temperature dependence of photoluminescence intensities of undoped and doped GaN

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 605-608

  Leroux, M ^a   Grandjean, N ^a   Beaumont, B ^a   Nataf, G ^a   Semond, F ^a   Massies, J ^a   Gibart, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033243008     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<605::AID-PSSB605>3.0.CO;2-S     Document Type: Article

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