High-power high-efficiency 1150-nm quantum-well laser

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 11, Issue 5, 2005, Pages 1217-1222

  Erbert, G ^a   Bugge, F ^a   Fricke, J ^a   Ressel, P ^a   Staske, R ^a   Sumpf, B ^a   Wenzel, H ^a   Weyers, M ^a   Trankle, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

1150 nm; Edge emitting diode lasers; GaAs; GaAs waveguide layers; InGaAs; InGaAs quantum wells; Quantum well laser; Reliable operation

Indexed keywords

OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

1150 NM; EDGE EMITTING DIODE LASERS; GAAS WAVEGUIDE LAYERS; INGAAS QUANTUM WELLS; RELIABLE OPERATIONS;

QUANTUM WELL LASERS;

EID: 31644440549     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2005.853843     Document Type: Article

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