Ac conduction in mixed oxides Al-In2O3-SnO 2-Al structure deposited by co-evaporation

Surface Review and Letters

Volumn 13, Issue 4, 2006, Pages 457-469

  Anwar, M ^a   Siddiqi, S A ^b   Ghauri, I M ^a  

^a GC UNIVERSITY   (Pakistan)

^b UNIVERSITY OF THE PUNJAB   (Pakistan)

Author keywords

Barrier height; Electron donors; Electron hopping; Indium interstitials; Loss tangent; Molar percent; Orientation and interfacial polarization; Oxygen vacancies; Tin substitution

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CAPACITANCE; CARRIER MOBILITY; EVAPORATION; LOW TEMPERATURE EFFECTS; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; TIN; TIN COMPOUNDS; VACUUM APPLICATIONS;

BARRIER HEIGHT; ELECTRON DONORS; ELECTRONIC HOPPING; INDIUM INTERSTITIALS; MIXED OXIDES; OXYGEN VACANCIES; SCHOTTKY BARRIERS; VACUUM EVAPORATION;

ALUMINA;

EID: 33846393187     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X06008438     Document Type: Article

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