Improved model for single-event burnout mechanism

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3336-3341

  Kuboyama, Satoshi ^a   Ikeda, Naomi ^a   Hirao, Toshio ^b   Matsuda, Sumio ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Avalanche multiplication; Bipolar junction transistor (BJT); Energetic particle induced charge spectroscopy (EPICS); Power MOSFET; Single event burnout (SEB)

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; HEAVY IONS; PROBLEM SOLVING; SAMPLING; SPECTROSCOPIC ANALYSIS;

AVALANCHE MULTIPLICATION; BIPOLAR JUNCTION TRANSISTOR (BJT); ENERGETIC PARTICLE INDUCED CHARGE SPECTROSCOPY (EPICS); POWER MOSFET; SINGLE-EVENT BURNOUT (SEB);

MOSFET DEVICES;

EID: 11044237129     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839512     Document Type: Conference Paper

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