SEUs induced by thermal to high-energy neutrons in SRAMs

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3798-3802

  Granlund, Thomas ^a,b   Olsson, Nils ^c  

^a AerotechTelub AB ^*  (Sweden)

^b Electromagnetic Technology Division   (Sweden)

^c SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

Semiconductor device radiation effects; Semiconductor device reliability; Semiconductor device testing; Semiconductor memories

Indexed keywords

RADIATION EFFECTS; RELIABILITY; SEA LEVEL; SEMICONDUCTOR DEVICE TESTING; STATIC RANDOM ACCESS STORAGE;

SEMICONDUCTOR DEVICE RADIATION EFFECTS; SEMICONDUCTOR DEVICE RELIABILITY;

NEUTRONS;

EID: 33846301396     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.880930     Document Type: Conference Paper

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