A comparative study between two neutron facilities regarding SEU

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 III, 2004, Pages 2922-2926

  Granlund, Thomas ^a,b   Granbom, Bo ^a,b   Olsson, Nils ^c  

^a Electromagnetic Technology Division   (Sweden)

^b Aerotech Telub AB ^*  (Sweden)

^c SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

Aircraft electronics; Cmos memory integrated circuits; Neutron radiation effects; Radiation effects; Semiconductor device radiation effects; Semiconductor device testing; Sram chips

Indexed keywords

CMOS INTEGRATED CIRCUITS; ERROR ANALYSIS; HIGH ENERGY PHYSICS; NEUTRON SOURCES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE TESTING; STATIC RANDOM ACCESS STORAGE;

AIRCRAFT ELECTRONICS; CMOS MEMORY INTEGRATED CIRCUITS; NEUTRON RADIATION EFFECTS; SEMICONDUCTOR DEVICE RADIATION EFFECTS; SRAM CHIPS;

NEUTRON BEAMS;

EID: 8344252937     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835070     Document Type: Article

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