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Volumn 53, Issue 6, 2006, Pages 3271-3276

A semi-empirical approach for heavy ion SEU cross section calculations

Author keywords

Diffusion model; Heavy ion; Rutherford scattering; Single event upset; Weibull

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRIC FIELD EFFECTS; MONTE CARLO METHODS; SCATTERING; WEIBULL DISTRIBUTION;

EID: 33846299181     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886200     Document Type: Conference Paper
Times cited : (20)

References (11)
  • 2
    • 0029521841 scopus 로고
    • Further development of the heavy ion cross section for single event upset: Model (HICUP)
    • Dec
    • L. W. Connell, F. W. Sexton, and A. K. Prinja, "Further development of the heavy ion cross section for single event upset: Model (HICUP)," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 2026-2034, Dec. 1995.
    • (1995) IEEE Trans. Nucl. Sci , vol.42 , Issue.6 , pp. 2026-2034
    • Connell, L.W.1    Sexton, F.W.2    Prinja, A.K.3
  • 3
    • 0035722021 scopus 로고    scopus 로고
    • Detailed analysis of secondary ions' effect for calculation of neutron-induced SER in SRAMs
    • Dec
    • G. Hubert, J.-M. Palau, K. Castellani-Coulié, M.-C. Calvet, and S. Fourtine, "Detailed analysis of secondary ions' effect for calculation of neutron-induced SER in SRAMs," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1953-1959, Dec. 2001.
    • (2001) IEEE Trans. Nucl. Sci , vol.48 , Issue.6 , pp. 1953-1959
    • Hubert, G.1    Palau, J.-M.2    Castellani-Coulié, K.3    Calvet, M.-C.4    Fourtine, S.5
  • 7
    • 0031337413 scopus 로고    scopus 로고
    • Estimation of latch up sensitive thickness and critical energy using large inclination heavy ions beam
    • Dec
    • R. Ecoffet and S. Duzellier, "Estimation of latch up sensitive thickness and critical energy using large inclination heavy ions beam," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2378-2385, Dec. 1997.
    • (1997) IEEE Trans. Nucl. Sci , vol.44 , Issue.6 , pp. 2378-2385
    • Ecoffet, R.1    Duzellier, S.2
  • 10
    • 0000883655 scopus 로고
    • Applicability of LET to single events in microelectronics structures
    • M. A. Xapsos, "Applicability of LET to single events in microelectronics structures," IEEE Trans. Nucl. Sci., vol. 39, p. 1613, 1992.
    • (1992) IEEE Trans. Nucl. Sci , vol.39 , pp. 1613
    • Xapsos, M.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.