Single-photon detection mechanism in a quantum dot transistor

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 356-360

  Beattie, N S ^a,b   Kardynal B E ^a   Shields, A J ^a   Farrer, I ^b   Ritchie, D A ^b   Pepper, M ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Hopping; Localization; Quantum dots

Indexed keywords

CHARGE TRANSFER; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON TUNNELING; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; PHOTONS; SELF ASSEMBLY; TRANSPORT PROPERTIES; TUNING;

HOPPING; LOCALIZATION; MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFET); QUANTUM COMPUTING; TWO-DIMENSIONAL ELECTRON SYSTEM (2DES);

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444257700     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.089     Document Type: Conference Paper

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