Time-resolved photoluminescence measurements of InGaAs/InP multiple-quantum-well structures at 1.3-μm wavelengths by use of germanium single-photon avalanche photodiodes

Applied Optics

Volumn 35, Issue 6, 1996, Pages 916-921

  Buller, G S ^a   Fancey, S J ^a   Massa, J S ^a   Walker, A C ^a   Cova, S ^b   Lacaita, A ^b  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Germanium avalanche photodiodes; InGaAs InP; Multiple quantum wells; Time resolved photoluminescence

Indexed keywords

ANALOG TO DIGITAL CONVERSION; CARRIER CONCENTRATION; CHARGE CARRIERS; MOLECULAR BEAM EPITAXY; OPTICAL SYSTEMS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER DYNAMICS; CARRIER RECOMBINATION; GERMANIUM AVALANCHE PHOTODIODES; INDIUM GALLIUM ARSENIDE; SINGLE PHOTON COUNTING TECHNIQUE; TIME RESOLVED PHOTOLUMINESCENCE; TIME TO AMPLITUDE CONVERTER;

PHOTODIODES;

EID: 0030080589     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.35.000916     Document Type: Article

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