Properties of tungsten-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics

Materials Research Bulletin

Volumn 42, Issue 2, 2007, Pages 274-280

  Wang, Wei ^a   Zhu, Jun ^a   Mao, Xiang Yu ^a   Chen, Xiao Bing ^b  

^a YANGZHOU UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

A. Ceramics; C. X ray diffraction; D. Dielectric properties; D. Ferroelectricity

Indexed keywords

BISMUTH COMPOUNDS; CERAMIC MATERIALS; DETERIORATION; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); POLARIZATION; THERMODYNAMIC STABILITY; TUNGSTEN; X RAY DIFFRACTION;

CURIE TEMPERATURE; OXYGEN VACANCIES; TUNGSTEN DOPING;

FERROELECTRIC MATERIALS;

EID: 33846253206     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2006.06.003     Document Type: Article

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