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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11, 2002, Pages 6451-6454

Ferroelectric properties of tungsten-substituted Bi4Ti3O12 thin film prepared by sol-gel method

(4) Kim, Jin Soo b Kim, Sang Su a Kim, Jong Kuk b Song, Tae Kwon a

a Changwon National University (South Korea)

b NONE

Author keywords

Fatigue; Ferroelectric; P E hysteresis loop; Remanent polarization; Sol gel; Tungsten substituted Bi4Ti3O12 (BTW) thin film

Indexed keywords

BISMUTH COMPOUNDS; COERCIVE FORCE; CRYSTAL MICROSTRUCTURE; FATIGUE OF MATERIALS; HYSTERESIS; MORPHOLOGY; PERMITTIVITY; POLARIZATION; REMANENCE; SOL-GELS; TUNGSTEN; X RAY DIFFRACTION ANALYSIS;

REMANENT POLARIZATION;

FERROELECTRIC THIN FILMS;

EID: 0036871784 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.6451 Document Type: Article

Times cited : (18)

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