Enhanced ferroelectric properties of V-doped BaBi4Ti4O15 single crystal

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 239-243

  Irie, Hiroshi ^a   Miyayama, Masaru ^b   Kudo, Tetsuichi ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Barium bismuth titanate; Bismuth layer structured ferroelectrics; Coercive field; Enhanced ferroelectric properties; Remanent polarization; Vanadium doped barium bismuth titanate

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; FERROELECTRICITY; INDUCTIVELY COUPLED PLASMA; PERMITTIVITY; PEROVSKITE; POLARIZATION; REMANENCE; SINGLE CRYSTALS; STOICHIOMETRY; SYNCHROTRON RADIATION; THERMAL EFFECTS; VANADIUM;

REMANENT POLARIZATION;

BARIUM COMPOUNDS;

EID: 0035056421     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.239     Document Type: Article

References (16)

1. Proc. Second Int. Conf. Synchrotron Radiation in Materials Science 1999