XRD and EXAFS studies of HfO2 crystallisation in SiO2 - HfO2 films

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1043-1048

  Afify, N D ^a   Dalba, G ^a   Mahendra Kumar Koppolu, U ^a   Armellini, C ^b   Jestin, Y ^b   Rocca, F ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b IFN CNR   (Italy)

Author keywords

Crystallisation; EXAFS; HfO2; High k materials; SiO2; Thin films; XRD

Indexed keywords

CRYSTALLIZATION; HAFNIUM COMPOUNDS; HEAT TREATMENT; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SILICA; X RAY DIFFRACTION;

EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS); HAFNIUM DIOXIDES;

THIN FILMS;

EID: 33846159831     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.021     Document Type: Article

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