Post deposition UV-induced O2 annealing of HfO2 thin films

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 957-960

  Fang, Q ^a   Liaw, I ^a   Modreanu, M ^b   Hurley, P K ^b   Boyd, I W ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; FILM GROWTH; HAFNIUM COMPOUNDS; PERMITTIVITY; ULTRAVIOLET RADIATION;

BREAKDOWN FIELDS; HFO2; INTERFACIAL LAYERS; THERMAL ANNEALING;

THIN FILMS;

EID: 14644413558     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.017     Document Type: Conference Paper

References (4)

1. Q. Fang, J-Y. Zhang, Z.M. Wang, J.X. Wu, B.J. O'Sullivan, and P.K. Hurley Thin Solid Films 427 1-2 2003 391 396
2. Q. Fang, J-Y. Zhang, Z.M. Wang, J.X. Wu, B.J. O'Sullivan, and P.K. Hurley Thin Solid Films 428 2003 263 268
3. O'Sullivan BJ, O'Connor E, Hurley PK, Modreanu M, Roussel H, Audier MA, et al. Physics and technology of high k gate dielectrics I. In: Kar S, Misra D, Singh R, Gonzalez F, editors PV. 2002-28. The electrochemical society proceedings series, Pennington, NJ, 2002. p. 197
4. Q. Fang, J-Y. Zhang, Z.M. Wang, M. Modreanu, B.J. O'Sullivan, and P.K. Hurley Thin Solid Films 453-454 2004 203 207