Numerical and analytical modeling of the high-fIeld electron mobility in strained silicon

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 223-226

  Dhar, S ^a   Karlowatz, G ^a   Ungersboeck, E ^a   Kosina, H ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; STRAIN RATE; STRESS ANALYSIS;

ANALYTICAL MODELING; FIELD DIRECTIONS; STRAINED SILICON;

ELECTRON MOBILITY;

EID: 33845906057     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201513     Document Type: Conference Paper

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