Matrix effects in SIMS analysis of high-dose boron implanted silicon wafers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 134, Issue 1, 1998, Pages 121-125

  Yamazaki, Hideyuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

High dose boron ion implantation; Matrix effects; Secondary ion mass spectroscopy

Indexed keywords

BORON; ION IMPLANTATION; RADIATION EFFECTS; SECONDARY ION MASS SPECTROMETRY; SURFACE PHENOMENA;

SECONDARY ION EMISSION;

SILICON WAFERS;

EID: 0031675881     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)80041-4     Document Type: Article

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