Fabrication of a high-performance 1 mm AlGaN/GaN HEMT on SiC substrate

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 11, 2006, Pages 1981-1983

  Luo, Weijun ^a,b   Chen, Xiaojuan ^b   Li, Chengzhan ^b   Liu, Xinyu ^b   He, Zhijing ^b   Wei, Ke ^b   Liang, Xiaoxin ^b   Wang, Xiaoliang ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

AlGaN GaN; HEMT; Microwave power; Power gain

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; TRANSCONDUCTANCE;

BREAKDOWN VOLTAGE; MICROWAVE POWER; POWER GAIN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33845758543     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Wu Y F, Kapolnek D, Ibbetson J P, et al. Very-high power density AlGaN/GaN HEMT. IEEE Trans Electron Devices, 2001, 48: 586
2. Sheppard S T, Doverspike K, Pribble W L, et al. High power microwave GaN/AlGaN HEMT's on silicon carbide. IEEE Electron Device Lett, 1999, 20: 161
3. Therrien R, Singhal S, Johnson J W, et al. A 36 mm GaN-on-Si HFET producing 368 W at 60 V with 70% drain efficiency. IEEE Electron Devices Meeting, 2005: 568
4. Lee G, Saunier P, Yang Jinwei. AlGaN/GaN HEMT on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz. IEEE Electron Device Lett, 2003, 24(10): 616
5. Xiao Dongping, Liu Jian, Wei Ke. High transconductance AlGaN/GaN HEMT grown on sapphire substrates. Chinese Journal of Semiconductors, 2003, 24(9): 907
6. Chen Tangsheng, Jiao Gang, Xue Fangshi, et al. Undoped AlGaN/GaN microwave power HEMT. Chinese Journal of Semiconductors, 2004, 25(1): 69 (in Chinese)