Undoped AlGaN/GaN microwave power HEMT

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 1, 2004, Pages 69-72

  Chen, Tangsheng ^a   Jiao, Gang ^a   Xue, Fangshi ^a   Cao, Chunhai ^a   Li, Fuxiao ^a  

^a NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

AlGaN GaN; High electron mobility transistor; Microwave high power; Wide bandgap semiconductor

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; STRUCTURAL DESIGN;

MICROWAVE HIGH POWER; SCHOTTKY BARRIER CONTACT; WIDE BANDGAP SEMICONDUCTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2942546151     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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8. Kikkawa T, Nagahara M, Kimura T, et al. A 36 W CW AlGaN/GaN HEMT using surface-charge-controlled structure. IEEE Trans Electron Devices, 2001, 48(3): 560