High transconductance AlGaN/GaN HEMT growth on sapphire substrates

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 24, Issue 9, 2003, Pages 907-911

  Xiao, Dongping ^a   Liu, Jian ^a   Wei, Ke ^a   He, Zhijing ^a   Liu, Xinyu ^a   Wu, Dexin ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

AlGaN GaN; High electron mobility transistors; Transconductance

Indexed keywords

GALLIUM NITRIDE; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; DRAIN CURRENT DENSITY; GATE LENGTH DEVICES; GATE TO SOURCE VOLTAGE; UNITY GAIN CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1542607834     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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