Selective growth of InGaAs/GaAs quantum dot chains on pre-patterned GaAs(100)

Nanotechnology

Volumn 17, Issue 9, 2006, Pages 2275-2278

  Lee, J H ^a   Wang, Z M ^a   Liang, B L ^a   Black, W T ^a   Kunets, Vas P ^a   Mazur, Yu I ^a   Salamo, G J ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

PRE-PATTERNED SUBSTRATE; QUANTUM DOT CHAINS; VERTICAL STACKING TECHNIQUES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646238465     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/9/034     Document Type: Article

References (15)

1. Mowbray D J and Skolnick M S 2005 J. Phys. D: Appl. Phys. 38 2059-76
2. Liang C-T, Simmons M Y, Smith C G, Kim G-H, Ritchie DA and Pepper M 2000 Appl. Phys. Lett. 76 1134-6
3. Mokerov V G, Fedorov Yu V, Velikovski L E and Scherbakova M Yu 2001 Nanotechnology 12 552-5
4. Chang K P, Yang S L, Chuu D S, Hsiao R S and Chen J F 2005 J. Appl. Phys. 97 83511
5. Jin P, Ye X L and Wang Z G 2005 Nanotechnology 16 2775-8
6. Endoh A, Nakata Y, Sugiyama Y, Takatsu M and Yokoyama N 1998 1998 Int. Conf. on Indium Phosphide and Related Materials pp167-70 (Cat. No.98CH36129)
7. Xie Q, Madhukar A, Chen P and Kobayashi N P 1995 Phys. Rev. Lett. 75 2542
8. Wang Z M, Holmes K, Mazur Yu I and Salamo G J 2004 Appl. Phys. Lett. 84 1931
9. Wang Zh M, Churchill H, George C E and Salamo G J 2004 J. Appl. Phys. 96 6908-11
10. Lee B C, Lin S D, Lee C P, Lee H M, Wu J C and Sun KW 2002 Appl. Phys. Lett. 80 326-8
11. Xie Z G and Solomon G S 2005 Appl. Phys. Lett. 87 093106
12. Ozasa K, Aoyagi Y, Hara M, Maeda M, Yamane A and Arai Y 2004 Physica E 21 265-9
13. Broekman L, Leckey R, Riley J, Usher B and Sexton B 1995 Surf. Sci. 331-333 1115-21
14. Wang Zh M, Mazur Yu I, Salamo G J, Lytvin P M, Strelchuk VV and Valakh M Ya 2004 Appl. Phys. Lett. 84 4681-3
15. Wang Zh M, Lee J H, Liang B L, Black W T, Kunets V P, Mazur Yu I and Salamo G J 2006 Appl. Phys. Lett. at press