Photoluminescence and electrical properties of N-implanted ZnO films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 254, Issue 1, 2007, Pages 83-86

  Zhang, X D ^a   Liu, C L ^a   Wang, Z ^a   Lu Y Y ^a   Yin, L J ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Doping level; Ion implantation; Photoluminescence; ZnO

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; HALL EFFECT; ION IMPLANTATION; PHOTOLUMINESCENCE;

DOPING LEVEL; GLASS SUBSTRATES; HALL EFFECT MEASUREMENTS;

ZINC OXIDE;

EID: 33845732695     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.074     Document Type: Article

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