Internal cooling in a semiconductor laser diode

IEEE Photonics Technology Letters

Volumn 14, Issue 4, 2002, Pages 453-455

  Pipe, K P ^a   Ram, R J ^a   Shakouri, A ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b University of California Santa Cruz   (United States)

Author keywords

Electrothermal effects; Laser thermal factors; Lasers; Photothermal effects; Semiconductor lasers; Thermionic emission; Thermionic energy conversion; Thermoelectric devices; Thermoelectric energy conversion; Thermoelectricity

Indexed keywords

COOLING; ENERGY CONVERSION; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMIONIC EMISSION; THERMOELECTRICITY;

INTERNAL COOLING;

SEMICONDUCTOR LASERS;

EID: 0036538914     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.992575     Document Type: Article

References (18)

1. d of high-power InGaAsP/GaAs λ = 0.8μm lasers
2. Modelling the temperature dependence of threshold current, external differential efficiency and lasing wavelength in QW laser diodes
3. Monolithically Peltier-cooled vertical-cavity surface-emitting lasers
4. Heterostructure integrated thermionic coolers
5. Monolithic integration of thin film coolers with optoelectronic devices
6. A two-dimensional non-isothermal finite element simulation of laser diodes
7. Thermoelectric effects in submicron heterostructure barriers
8. A proposal of a method for analysing the leakage characteristics of 1.3 mm semiconductor buried heterostructure lasers
9. Semiclassical description of electron transport in semiconductor quantum-well devices
10. Bias-dependent Peltier coefficient in bipolar devices
11. Internal thermoelectric heating and cooling in heterostructure diode lasers
12. Evidence of refrigerating action by means of photon emission in semiconductor diodes
13. Optical refrigeration in light-emitting diodes
14. External radiative quantum efficiency of 96% from a GaAs/GaInP heterostructure
15. 2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm