Behavior of radiation-induced defects and amorphization in silicon crystal

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 121, Issue 1-4, 1997, Pages 299-301

  Baba, A ^a   Bai, D ^a   Sadoh, T ^a   Kenjo, A ^a   Nakashima, H ^a   Mori, H ^a   Tsurushima, T ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; CRYSTAL DEFECTS; CRYSTALS; ION BEAMS; ION BOMBARDMENT; RADIATION EFFECTS; THERMAL EFFECTS;

RADIATION-INDUCED DEFECTS;

SILICON;

EID: 0031546149     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00392-8     Document Type: Article

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