Low temperature technology options for integrated high density capacitors

Proceedings - Electronic Components and Technology Conference

Volumn 2006, Issue , 2006, Pages 515-519

  Soussan, P ^a   Goux, L ^a   Dehan, M ^a   Vander Meeren, H ^a   Potoms, G ^a   Wouters, D J ^a   Beyne, E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RADIOFREQUENCY SPECTROSCOPY;

CAPACITANCE DENSITY; FABRICATION TEMPERATURE; INTEGRATED HIGH-DENSITY CAPACITORS;

INTEGRATED CIRCUIT LAYOUT;

EID: 33845566148     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2006.1645696     Document Type: Conference Paper

References (11)

1. "(Ba,Sr) TiO3 Thin films for DRAM's"in "Thin Film Ferroelectric Materials and Devices", S. Summerfelt, Kluwer Academic Publishers, Boston 1997, Chapter 1, pp 1-42
2. 2) Using ALD HfO2 Dielectrics", X. Yu et Al, IEED Elect. Dev. Letter. 24(2), (2003) 63
3. " High Capacitance Cu/Ta2O5/Cu MIM structures for SOC applications featuring a single mask add-on process", T. Ishikawa et al, IEDM 2002
4. 3 and AlTiOx Dielectrics", S. B. Chen, IEEE Elect. Dev. Letter. 23(4), (2002) 185
5. "Integration of passive components in thin film multilayer MCM-D technology for wireless front-end applications", P. Pieters et al, Microwave conference 2000, Asia-Pacific 221
6. "Properties of anodic oxide films prepared on Nitrogen doped Tantalum films", T. Kamei, E. Matsuzaki, Thin Solid Films 77 (1981), pp 259
7. "Integration of MOCVD SBT Stacked FerroelectricCapacitors in a 0.35 μm CMOS Technology", D.Maes et al, Integrated Ferroelectrics, 66 (2004), pp 71
8. "SrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates", S.Regnery et al., Journal of applied physics 97 (2005)
9. 5 thin films", Y. S. Kim y. h. lEE, K. M. Lim, M. Y. Sung, Applied Physics letters 74 (19) (1999), PP2800
10. "Oxygen Barrier for Stacked SBT-FeCAP on W-Plug" Lisoni et al, International Joint Conference on the Applications of Ferroelectrics (IFFF 2002), May 28-June 1, 2002, Nara (Japan), Paper 31A-TF7-3C, abstract 477
11. "International Technology Roadmap for Semiconductors", RF and Analog/Mixed signal Technologies for Wireless Communications, 2005 Update