Nonvolatile gate effect in a ferroelectric-semiconductor quantum well

Physical Review Letters

Volumn 97, Issue 24, 2006, Pages

  Stolichnov, Igor ^a,b   Colla, Enrico ^a,b   Setter, Nava ^a,b   Wojciechowski, Tomasz ^b   Janik, Elzbieta ^b   Karczewski, Grzegorz ^b  

^a EPFL   (Switzerland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; FERROELECTRIC MATERIALS; FERROELECTRICITY; GATES (TRANSISTOR); MICROSCOPIC EXAMINATION; NONVOLATILE STORAGE;

FERROELECTRIC OXIDES; SCANNING PROBE MICROSCOPY; SEMICONDUCTOR CHANNELS; TRANSISTOR MEMORIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845534580     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.97.247601     Document Type: Article

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