Characterization of inductively coupled plasma in the ionized physical vapor deposition system

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1797-1803

  Chiu, K F ^a   Barber, Z H ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PARAMETERS; INPUT ENERGY; ION DENSITY; ION ENERGIES; ION FLUXES; IONIZATION FRACTIONS; IONIZED PHYSICAL VAPOR DEPOSITION; METAL FLUXES; METALLIC SPECIES; ONE-DIMENSIONAL MODEL; PLASMA PARAMETER; PLASMA POTENTIAL; PROBE METHODS; RF COIL; SUBSTRATE HOLDERS;

FILM GROWTH; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; IONIZATION; PROBES;

VAPORS;

EID: 33845447926     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430897     Document Type: Article

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