Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering

Brazilian Journal of Physics

Volumn 36, Issue 3 B, 2006, Pages 978-981

  Leite, D M G ^a   Pereira, A L J ^a   Da Silva, L F ^a   Dias Da Silva, J H ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

GaN; GaN:H; Hydrogenation; Nanocrystalline; Sputtering

Indexed keywords

EID: 33845411201     PISSN: 01039733     EISSN: 01039733     Source Type: Journal    
DOI: 10.1590/S0103-97332006000600048     Document Type: Conference Paper

References (17)

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