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Volumn 28, Issue 5A, 1989, Pages L730-L733
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Compositional disordering of In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures by repetitive rapid thermal annealing
a a a a a
a
NTT CORPORATION
(Japan)
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Author keywords
Dopant free disordering; Lno0.53Gao0.47As Ino52Al0.48As MQW; Optical transmission; Photoluminescence; Repetitive rapid thermal annealing
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Indexed keywords
HEAT TREATMENT--ANNEALING;
LIGHT--TRANSMISSION;
PHOTOLUMINESCENCE;
COMPOSITIONAL DISORDERING;
INDIUM ALUMINUM ARSENIDE;
INDIUM GALLIUM ARSENIDE;
MULTIQUANTUM WELL STRUCTURES;
OPTICAL TRANSMISSION;
RAPID THERMAL ANNEALING;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0024666163
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.28.L730 Document Type: Article |
Times cited : (17)
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References (16)
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