Improvement in thermal stability of mocvd HfO2 films using an ald SiNx interfacial layer

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 393-397

  Jang, J H ^a   Hong, S H ^a   Park, T J ^a   Heo, J H ^b   Yang, S R ^b   Kim, M Y ^a   Hwang, C S ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); INTERFACE QUALITY; INTERFACE TRAP DENSITY; INTERFACIAL LAYER (IL);

THIN FILMS;

EID: 33845240580     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209288     Document Type: Conference Paper

References (6)

1. J.K. Schaeffer, S. B. Samavedam, D. C. Gilmer, V. Dhandapani, P. J. Tobin, J. Mogab, B.-Y. Nguyen, B.E. white, Jr., S. Dakshina-Murthy, R.S. Rai, Z.-X. Jiang, R.Martin, M. V. Raymond, M. Zavala, L. B. La, J. A. Smith, R. Garcia, D.Roan, M. Kottke, and R. B. Gregory, J. Vac. Sci. Technol. B 21, 11(2003)
2. M. Cho, J. Park, H. B. Park, C. S. Hwang, J. H. Jeong, and K. S. Hyun, Appl. Phys. Lett. 81, 334(2002)
3. M. Cho, H. B. Park, J. Park, C. S. Hwang, J.-C. Lee, S.-J. Oh, J. Jeong, K.S. Hyun, H.-S. Kang, Y.-W. Kim, and J.-H. Lee, J. Appl. Phys. 94, 2563, (2003)
4. G.D.Wilk, et al., J,Appl.phys. 87, 484(2000)
5. M. Cho, H. Park, J. Park, S. Lee, C. S. Hwang, G. Jang, and J. Jang, Appl. Phys. Lett. 83, 5503(2003)
6. D. Plummer, M. D. Deal, and P. B. Griffin, Silicon VLSI Technology(Prentice-Hall, Englewood Cliffs, NJ, 2000), p. 289.