Improvement of characteristic temperature for AlGaInP laser diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5628, Issue , 2005, Pages 127-134

  Huang, Man Fang ^a   Tsai, Meng Lun ^a   Kuo, Yen Kuang ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

AlGaInP; Characteristic temperature; GRIN SCH; InGaP; Laser diode

Indexed keywords

CLADDING (COATING); GRADIENT INDEX OPTICS; OPTIMIZATION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

ALGAINP; CHARACTERISTIC TEMPERATURE; GRIN-SCH; INGAP;

SEMICONDUCTOR LASERS;

EID: 18944382736     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.576671     Document Type: Conference Paper

References (32)

1. M. Ohya, H. Fujii, K. Doi, K. Endo, "Low current and highly reliable operation at 80°C of 650 nm 5 mW LDs for DVD applications," Elec. Lett. 35, 46, 1999.
2. See, for example, web site address: http://sharp-world.com/products/ device/catalog/index.html
3. M.F. Huang, H.C. Lee, J.K. Ho, H.C. Lin, C.S. Cheng, C.C. Kuo, Y.K. Kuo, "Laser diode for DVD pick-up head," SPIE Proc. 3419, 110, 1998.
4. M.F. Huang, S. S. Ou, C.C. Liu, "High power, high efficiency 670 nm GaInP/AlGaInP laser diodes," IEDMS, B6, December, 1996.
5. G.J. Bauhuis, P.R. Hageman, P.K. Larsen, "Heavily doped p-type AlGaInP grown by metalorganic chemical vapor deposition", J. of Crystal Growth 191, 313, 1998.
6. H. Hamada, R. Hiroyama, S. Honda, M. Shono, K, Yodoshi, T. Yamaguchi, "AlGaInP strained multiple quantum-well visible laser diode with a multi quantum barrier grown on misoriented substrates," IEEE J. Quantum Electron. 29, 1844, 1993.
7. T. Katsuyama, I. Yoshida, J. Shinkai, J. Hashimoto, H. Hayashi, "Very low threshold current AlGaInP/GaInP strained single quantum well visible laser diode," Elect. Lett. 26, 1375, 1990.
8. H.B. Serreze, Y.C. Chen, "Low-threshold, strained-layer, GaInP/AlGaInP GRINSCH visible diode lasers," IEEE Photon. Technol. Lett. 3, 397, 1991.
9. T. Katsuyama, I. Yoshida, J. Shinkai, J. Hashimoto, H. Hayashi, "High temperature and low threshold current operation AlGaInP/GaInP strained multiple quantum well visible laser diodes," App. Phys. Lett. 59, 3351, 1991.
10. M. Mannoh, J. Hoshina, S. Kamiyama, H. Ohta, Y. Ban, K. Ohnaka, "High power and high-temperature operation of GaInP/AlGaInP strained multiple quantum well lasers," App. Phys. Lett. 62, 1173, 1993.
11. P. Blood, P.M. Smowton, "Strain dependence of threshold current in fixed-wavelength GaInP laser diodes", IEEE J. Sel. Top. Quantum Electron. 1, 707, 1995.
12. M. Ohya, K. Doi, H. Fujii, K. Endo, J. Okuda, K. Anjiki, "Highly reliable operation at 80C for 650 nm 5 mW AlGaInP LDs," Elec. Lett. 33, 1636, 1997.
13. H. Hamada, M. Shono, S. Honda, R. Hiroyama, K. Yodoshi, T. Yamaguchi, "AlGaInP visible laser diodes grown on misoriented substrates," IEEE J. Quantum Electron. 27, 1483, 1991.
14. M. Suzuki, K. Itaya, M. Okajima, "Effects of substrate misorientation on improvement of electrical properties in Zn-doped InAIP alloys," Jpn. J. Appl. Phys. 33, 749, 1994.
15. S.A. Wood, C.H. Molloy, P.M. Smowton, P. Blood, C.C. Button, "Minority carrier effects in GaInP laser diodes," IEEE J. Quantum Electron. 36, 742, 2000.
16. J. Nagle, S. Hersee, M. Krakowski, T. Weli, C. Weisbuch, "Threshold current of single quantum well lasers: the role of the confining layers," Appl. Phys. Lett., 49, 1325, 1986.
17. S.R. Chinn, P.S. Zory, A.R. Reisinger, "A model for GRIN-SCH-SQW diode lasers," IEEE J. Quantum Electron. 24, 2191, 1988.
18. W.X. Zou, Z.M. Chuang, K-K. Law, N. Dagli, L.A. Coldren, J.L. Merz, "Analysis and optimization of gradedindex separate-confinement heterostructure waveguides for quantum well lasers," J. Appl. Phys. 69, 2857, 1991.
19. M. Ohkubo, S. Namiki, T. Ijichi, A. Iketani, T. Kikuta, "0.98 μm InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber," IEEE J. Quantum Electron. 29, 1932, 1993.
20. D.P. Bour, J.R. Shealy, "High-power (1.4 W) AlGaInP graded-index separate confinement heterostructure visible (1-658 nm) laser," Appl. Phys. Lett. 51, 1658, 1987.
21. R.F. Kazarinov, G.V. Tsarenkov, "Theory of a variable-gap laser," Sov. Phys. Semicond. 10, 178, 1976.
22. W.T. Tsang, "A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam," Appl. Phys. Lett. 39, 134, 1981.
23. S.D. Hersee, B de Cremoux, J. P. Duchemin, "Some characteristics of the GaAs/GaAlAs graded-index separate confinement heterostructure quantum well laser structure," Appl. Phys. Lett. 44, 476, 1984.
24. H. Hirayama, Y. Miyake, M. Asada, "Analysis of current injection efficiency of separate-confinement-heterostructure quantum file lasers," IEEE J. Quantum Electron. 28, 68, 1992.
25. M. Ohkubo, T. Ijichi, A. Iketani, T. Kikuta, "980-nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers," IEEE J. Quantum Electron. 30, 408, 1994.
26. M.R. Gokhale, J.G. Dries, P.V. Studenkov, S.R. Forrest, D.Z. Gartuzov, "High-power high-efficiency 0.98-μm wavelength InGaAs-InGaAsP-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy," IEEE J. Quantum Electron. 33, 2266, 1997.
27. Z. Li, K.M. Dzurko, A. Delage, A.P. McAlister, "A self-consistent two-dimensional model of quantum-well semiconductor lasers: optimization of a GRIN-SCH SQW laser structure," IEEE J. Quantum Electron. 28, 792, 1992.
28. M. Dion, Z.-M. Li, D. Ross, F. Chatenoud, R.L. Williams, S. Dick, "A study of the temperature sensitivity of GaAs-AlGaAs multiple quantum-well GRINSCH lasers," IEEE J. Sel. Top. Quantum Electron. 1, 230, 1995.
29. Please refer, for example, to http://sharp-world.com/products/device/ lineup/opto/laser-diode/index.html.
30. P. Blood and P. M. Swomton, "Strain dependence of threshold current in fixed-wavelength GaInP laser diodes," IEEE J. Sel. Top. Quantum Electron. 1, 707, 1995.
31. "Lastip Manual" by Crosslight Inc, Ch. 1-4 (2004).
32. K. Interholzinger, D. Patel, C.S. Menoni, P. Thiagarajan, G.Y. Robinson, J.E. Fouquet, "Strain-induced modifications of the band structure of InGaP-InAIP multiple quantum wells," IEEE J. Quantum Electron. 34, 93, 1998.