Selective-area growth of high-crystalline-quality InGaAlAs by metal-organic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 384-389

  Tsuchiya, T ^a   Shimizu, J ^a   Shirai, M ^a   Aoki, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

A3. Low press. metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III V materials; B2. Semiconducting indium phosphide; B3. Laser diodes

Indexed keywords

CRYSTALLIZATION; DISTRIBUTED FEEDBACK LASERS; ENERGY GAP; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

SELECTIVE EPITAXY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037292407     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01865-1     Document Type: Conference Paper

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