Prediction method for the bandgap profiles of InGaAsP multiple quantum well structures fabricated by selective area metal-organic vapor phase epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 464-467

  Shioda, Tomonari ^a,c   Sugiyama, Masakazu ^a,c   Shimogaki, Yukihiro ^a,c   Nakano, Yoshiaki ^b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP DISTRIBUTION; BANDGAP PROFILES; INTEGRATED SEMICONDUCTOR OPTICAL DEVICES; QUANTUM WELL STRUCTURES;

ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33747439353     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517532     Document Type: Conference Paper

References (6)

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