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Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

Emission at 247 nm from GaN quantum wells grown by MOCVD

(6) Someya, Takao a Hoshino, Katsuyuki b Harris, Janet C a Tachibana, Koiclii b Kako, Satoshi a Arakawa, Yasuhiko b

a UNIVERSITY OF TOKYO (Japan)

b INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751310814 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (1)

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