Material and electrical characterization of TMS-based silicidation of the Cu-dielectric barrier interface for electromigration improvement of 65 nm interconnects

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2407-2411

  Plantier, L ^a   Le Friec, Y ^b   Humbert, A ^c   Imbert, G ^b   Sabouret, E ^b   Sardo, M ^b   Girault, V ^b   Delille, D ^d   Jullian, S ^d   Junker, K ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b STMICROELECTRONICS   (France)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

CuSiN; Electromigration; Silicide; TMS

Indexed keywords

DIELECTRIC MATERIALS; ELECTROMIGRATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT SCATTERING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY;

CUSIN; SILICIDE; TRI-METHYL SILANE (TMS);

SILICON COMPOUNDS;

EID: 33751308653     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.046     Document Type: Article

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