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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 458-461

Self-interstitial-oxygen related defects in low-temperature irradiated Si

(5) Khirunenko, L I a Murin, L I b Lindstrom J L c Sosnin, M G a Pomozov, Yu V a

a INSTITUTE OF HYDROBIOLOGY (Ukraine)

b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS (Belarus)

c LUND UNIVERSITY (Sweden)

Author keywords

Irradiation; Oxygen isotopes; Self interstitials; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRON IRRADIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; RADIATION EFFECTS;

OXYGEN ISOTOPES;

SEMICONDUCTING SILICON;

EID: 0035677920 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00731-1 Document Type: Article

Times cited : (14)

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