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Volumn 6, Issue , 2006, Pages 1-216

Computational electronics

Author keywords

Computational science and engineering; Integrated circuit technology; Semiconductor device simulation; Semiconductor transport; Technology computer aided design

Indexed keywords

COMPUTATIONAL SCIENCE; INTEGRATED CIRCUIT TECHNOLOGY; SEMICONDUCTOR DEVICE SIMULATIONS; SEMICONDUCTOR TRANSPORT; TECHNOLOGY COMPUTER AIDED DESIGN (TCAD);

EID: 33751284721     PISSN: 19321252     EISSN: 19321716     Source Type: Book Series    
DOI: 10.2200/S00026ED1V01Y200605CEM006     Document Type: Article
Times cited : (12)

References (147)
  • 1
    • 84938518330 scopus 로고    scopus 로고
    • Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
    • D. K. Ferry and S. M. Goodnick, Transport in Nanostructures (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, 1997).
    • (1997) Transport in Nanostructures
    • Ferry, D.K.1    Goodnick, S.M.2
  • 3
    • 33751271014 scopus 로고    scopus 로고
    • Computational electronics
    • K. H. J. Buschow, R. W. Cahn, M. C. Flemings, E. J. Kramer and S. Mahajan Eds. (Elsevier, New York)
    • S. M. Goodnick and D. Vasileska, "Computational electronics," in Encyclopedia of Materials: Science and Technology, vol. 2, K. H. J. Buschow, R. W. Cahn, M. C. Flemings, E. J. Kramer and S. Mahajan Eds. (Elsevier, New York, 2001), pp. 1456-1471.
    • (2001) Encyclopedia of Materials: Science and Technology , vol.2 , pp. 1456-1471
    • Goodnick, S.M.1    Vasileska, D.2
  • 4
    • 0020098857 scopus 로고
    • A two-dimensional model of the avalanche effect in MOS transistors
    • A. Schütz, S. Selberherr, and H. Pötzl, "A two-dimensional model of the avalanche effect in MOS transistors," Solid State Electron., vol. 25, pp. 177-183 (1982).
    • (1982) Solid State Electron. , vol.25 , pp. 177-183
    • Schütz, A.1    Selberherr, S.2    Pötzl, H.3
  • 6
    • 0004292076 scopus 로고
    • Prentice Hall Series in Solid State Physical Electronics, New Jersey
    • M. Shur, Physics of Semiconductor Devices (Prentice Hall Series in Solid State Physical Electronics, New Jersey, 1990).
    • (1990) Physics of Semiconductor Devices
    • Shur, M.1
  • 7
    • 84916389355 scopus 로고
    • Large signal analysis of a Silicon Read diode oscillator
    • D. L. Scharfetter and D. L. Gummel, "Large signal analysis of a Silicon Read diode oscillator," IEEE Trans. Electron. Devices, vol. ED-16, pp. 64-77 (1969).
    • (1969) IEEE Trans. Electron. Devices , vol.ED-16 , pp. 64-77
    • Scharfetter, D.L.1    Gummel, D.L.2
  • 8
    • 0014705867 scopus 로고
    • Transport equations for electrons in two-valley semiconductors
    • K. Bløtekjær, "Transport equations for electrons in two-valley semiconductors," IEEE Trans. Electron. Dev., vol. 17, p. 38 (1970).
    • (1970) IEEE Trans. Electron. Dev. , vol.17 , pp. 38
    • Bløtekjær, K.1
  • 9
    • 33751293981 scopus 로고
    • Monte Carlo simulation of submicron Si MOSFETs
    • G. Baccarani and M. Rudan Eds. (Technoprint, Bologna)
    • M. V. Fischetti and S. E. Laux, "Monte Carlo simulation of submicron Si MOSFETs," in Simulation of Semiconductor Devices and Processes, vol. 3, G. Baccarani and M. Rudan Eds. (Technoprint, Bologna, 1988), pp. 349-368.
    • (1988) Simulation of Semiconductor Devices and Processes , vol.3 , pp. 349-368
    • Fischetti, M.V.1    Laux, S.E.2
  • 12
    • 0003964324 scopus 로고    scopus 로고
    • Kluwer Academic/Plenum Publishers, New York
    • G. D. Mahan, Many-Particle Physics (Kluwer Academic/Plenum Publishers, New York, 2000).
    • (2000) Many-Particle Physics
    • Mahan, G.D.1
  • 13
    • 0342723158 scopus 로고    scopus 로고
    • Single and multiband modeling of quantum electron transport through layered semiconductor devices
    • doi:10.1063/1.365394
    • R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, "Single and multiband modeling of quantum electron transport through layered semiconductor devices," J. Appl. Phys., vol. 81, p. 7845 (1997) doi:10.1063/1.365394
    • (1997) J. Appl. Phys. , vol.81 , pp. 7845
    • Lake, R.1    Klimeck, G.2    Bowen, R.C.3    Jovanovic, D.4
  • 14
    • 0022044296 scopus 로고
    • An investigation of steady-state velocity overshoot in silicon
    • doi:10.1016/0038-1101(85)90100-5
    • G. Baccarani and M. Wordeman, "An investigation of steady-state velocity overshoot in silicon," Solid State Electron., vol. 28, p. 407 (1985) doi:10.1016/0038-1101(85)90100-5
    • (1985) Solid State Electron. , vol.28 , pp. 407
    • Baccarani, G.1    Wordeman, M.2
  • 15
    • 0009361557 scopus 로고
    • doi:10.1142/S0218202594000352
    • S. Cordier, Math. Mod. Meth. Appl. Sci., vol. 4, p. 625 (1994). doi:10.1142/S0218202594000352
    • (1994) Math. Mod. Meth. Appl. Sci. , vol.4 , pp. 625
    • Cordier, S.1
  • 17
    • 0003470014 scopus 로고
    • Saunders College Publishing, Philadelphia, Pennsylvania
    • N. W. Aschroft and N. D. Mermin, Solid State Physics (Saunders College Publishing, Philadelphia, Pennsylvania, 1976).
    • (1976) Solid State Physics
    • Aschroft, N.W.1    Mermin, N.D.2
  • 20
    • 0000281243 scopus 로고    scopus 로고
    • doi:10.1103/PhysRev.57.1169
    • C. Herring, Phys. Rev., vol. 57, p. 1169 (1140) doi:10.1103/PhysRev.57. 1169
    • Phys. Rev. , vol.57 , Issue.1140 , pp. 1169
    • Herring, C.1
  • 22
    • 0043210202 scopus 로고
    • doi:10.1103/PhysRev.97.869
    • J. Luttinger and W. Kohn, Phys. Rev., vol. 97, p. 869 (1955). doi:10.1103/PhysRev.97.869
    • (1955) Phys. Rev. , vol.97 , pp. 869
    • Luttinger, J.1    Kohn, W.2
  • 23
    • 36049057570 scopus 로고
    • doi:10.1103/PhysRev.141.789
    • M. L. Cohen and T. K. Bergstresser, Phys. Rev., vol. 141, p. 789 (1966). doi:10.1103/PhysRev.141.789
    • (1966) Phys. Rev. , vol.141 , pp. 789
    • Cohen, M.L.1    Bergstresser, T.K.2
  • 24
    • 33744685518 scopus 로고
    • doi:10.1103/PhysRevB.14.556
    • J. R. Chelikowsky and M. L. Cohen, Phys Rev. B, vol. 14, p. 556 (1976). doi:10.1103/PhysRevB.14.556
    • (1976) Phys Rev. B , vol.14 , pp. 556
    • Chelikowsky, J.R.1    Cohen, M.L.2
  • 25
    • 33751261713 scopus 로고    scopus 로고
    • note
    • Due to the fact that the heavy hole band does not have a spherical symmetry there is a discrepancy between the actual effective mass for density of states and conductivity calculations (number on the right) and the calculated value (number on the left) which is based on spherical constant-energy surfaces. The actual constant-energy surfaces in the heavy hole band are "warped," resembling a cube with rounded corners and dented-in faces.
  • 26
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • doi:10.1103/RevModPhys.55.645
    • C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, pp. 645-705 (1983) doi:10.1103/RevModPhys.55.645
    • (1983) Rev. Mod. Phys. , vol.55 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 27
    • 0001056045 scopus 로고
    • Monte Carlo calculation of electron transport in solids
    • P. J. Price, "Monte Carlo calculation of electron transport in solids," Semiconduct. Semimet., vol. 14, pp. 249-334 (1979).
    • (1979) Semiconduct. Semimet. , vol.14 , pp. 249-334
    • Price, P.J.1
  • 40
  • 44
    • 0036433829 scopus 로고    scopus 로고
    • Numerical methods for the semiconductor boltzmann equation based on spherical harmonics expansions and entropy discretizations
    • (2nn2) doi:10.1081/TT-120015508
    • C. Ringhofer, "Numerical methods for the semiconductor boltzmann equation based on spherical harmonics expansions and entropy discretizations," Transp. Theory and Stat. Phys., vol. 31, pp. 431-452 (2nn2) doi:10.1081/TT-120015508
    • Transp. Theory and Stat. Phys. , vol.31 , pp. 431-452
    • Ringhofer, C.1
  • 45
    • 84860017320 scopus 로고    scopus 로고
    • www.NanoHub.org
  • 48
    • 84916430884 scopus 로고
    • A self-consistent iterative scheme for one-dimensional steady state transistor calculation
    • H. K. Gummel, "A self-consistent iterative scheme for one-dimensional steady state transistor calculation," IEEE Trans. Electron. Devices, vol. 11, pp. 455-465 (1964).
    • (1964) IEEE Trans. Electron. Devices , vol.11 , pp. 455-465
    • Gummel, H.K.1
  • 50
    • 0015655220 scopus 로고
    • Computer-aided two-dimensional analysis of bipolar transistors
    • J. W. Slotboom, "Computer-aided two-dimensional analysis of bipolar transistors," IEEE Trans. Electron. Devices, vol. 20, pp. 669-679 (1973).
    • (1973) IEEE Trans. Electron. Devices , vol.20 , pp. 669-679
    • Slotboom, J.W.1
  • 51
    • 0009540733 scopus 로고
    • An accurate numerical steady state one-dimensional solution of the p-n junction
    • doi:10.1016/00381101(68)90137-8
    • A. DeMari, "An accurate numerical steady state one-dimensional solution of the p-n junction," Solid State Electron., vol. 11, pp. 33-59 (1968) doi:10.1016/00381101(68)90137-8
    • (1968) Solid State Electron. , vol.11 , pp. 33-59
    • Demari, A.1
  • 52
    • 84916389355 scopus 로고
    • Large signal analysis of a Silicon Read diode oscillator
    • D. L. Scharfetter and D. L. Gummel, "Large signal analysis of a Silicon Read diode oscillator," IEEE Transaction on Electron Devices, vol. ED-16, pp. 64-77 (1969).
    • (1969) IEEE Transaction on Electron Devices , vol.ED-16 , pp. 64-77
    • Scharfetter, D.L.1    Gummel, D.L.2
  • 53
    • 0020103264 scopus 로고
    • Current equations for velocity overshoot
    • K. K. Thornber, "Current equations for velocity overshoot," IEEE Electron. Device Lett., vol. 3, pp. 69-71 (1982).
    • (1982) IEEE Electron. Device Lett. , vol.3 , pp. 69-71
    • Thornber, K.K.1
  • 54
    • 0026206477 scopus 로고
    • Multidimensional augmented current equations with velocity overshoot
    • doi:10.1109/55.119151
    • E. C. Kan, U. Ravaioli, and D. Chen, "Multidimensional augmented current equations with velocity overshoot," IEEE Electron. Device Lett., vol. 12, p. 419 (1991). doi:10.1109/55.119151
    • (1991) IEEE Electron. Device Lett. , vol.12 , pp. 419
    • Kan, E.C.1    Ravaioli, U.2    Chen, D.3
  • 56
    • 0015346006 scopus 로고
    • Electron dynamics in short-channel field-effect transistors
    • J. G. Ruch, "Electron dynamics in short-channel field-effect transistors," IEEE Trans. Electron. Devices, vol. 19, p. 652 (1972).
    • (1972) IEEE Trans. Electron. Devices , vol.19 , pp. 652
    • Ruch, J.G.1
  • 57
    • 0022184756 scopus 로고
    • Observation of electron velocity overshoot in sub-100-nm-channel MOSFETs in Si
    • S. Chou, D. Antoniadis, and H. Smith, "Observation of electron velocity overshoot in sub-100-nm-channel MOSFETs in Si," IEEE Electron. Device Lett., vol. 6, p. 665 (1985).
    • (1985) IEEE Electron. Device Lett. , vol.6 , pp. 665
    • Chou, S.1    Antoniadis, D.2    Smith, H.3
  • 58
    • 0023961304 scopus 로고
    • Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers
    • G. Shahidi, D. Antoniadis, and H. Smith, "Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers," IEEE Electron. Device Lett., vol. 8, p. 94 (1988).
    • (1988) IEEE Electron. Device Lett. , vol.8 , pp. 94
    • Shahidi, G.1    Antoniadis, D.2    Smith, H.3
  • 60
    • 0025512595 scopus 로고
    • Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling
    • G. K. Wachutka, "Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling," IEEE Trans. Comput.-Aided Des., vol. 9, pp. 1141-1149 (1990).
    • (1990) IEEE Trans. Comput.-Aided Des. , vol.9 , pp. 1141-1149
    • Wachutka, G.K.1
  • 62
    • 0029393178 scopus 로고
    • Impact ionization and distribution functions in sub-micron nMOSFET technologies
    • doi:10.1109/55.464810
    • J. D. Bude, "Impact ionization and distribution functions in sub-micron nMOSFET technologies," IEEE Electron. Device Lett., vol. 16, pp. 439-441 (1995). doi:10.1109/55.464810
    • (1995) IEEE Electron. Device Lett. , vol.16 , pp. 439-441
    • Bude, J.D.1
  • 63
    • 0024011306 scopus 로고
    • The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors
    • doi:10.1109/16.2514
    • B. Meinerzhagen and W. L. Engl, "The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors," IEEE Trans. Electron. Devices, vol. 35, pp. 689-697 (1988) doi:10.1109/16.2514
    • (1988) IEEE Trans. Electron. Devices , vol.35 , pp. 689-697
    • Meinerzhagen, B.1    Engl, W.L.2
  • 65
    • 36149018649 scopus 로고
    • Diffusion of hot and cold electrons in semiconductor barriers
    • doi:10.1103/PhysRev.126.2002
    • R. Straton, "Diffusion of hot and cold electrons in semiconductor barriers", Phys. Rev., vol. 126, pp. 2002-2014 (1962) doi:10.1103/PhysRev. 126.2002
    • (1962) Phys. Rev. , vol.126 , pp. 2002-2014
    • Straton, R.1
  • 66
    • 33646893485 scopus 로고    scopus 로고
    • A review of hydrodynamic and energy-transport models for semiconductor device simulation
    • T. Grasser, T.-W. Tang, H. Kosina, and S. Selberherr, "A review of hydrodynamic and energy-transport models for semiconductor device simulation," Proc. IEEE, vol. 91, pp. 251-274 (2003).
    • (2003) Proc. IEEE , vol.91 , pp. 251-274
    • Grasser, T.1    Tang, T.-W.2    Kosina, H.3    Selberherr, S.4
  • 67
    • 33751303842 scopus 로고
    • A critical assessment of hydrodynamic transport model using the scattering matrix approach
    • M. A. Stettler, M. A. Alam, and M. S. Lundstrom, "A critical assessment of hydrodynamic transport model using the scattering matrix approach," in Proceedings of the NUPAD Conference, pp. 97-102 (1992).
    • (1992) Proceedings of the NUPAD Conference , pp. 97-102
    • Stettler, M.A.1    Alam, M.A.2    Lundstrom, M.S.3
  • 68
    • 84966233568 scopus 로고    scopus 로고
    • Multi-level adaptive solutions to boundary value problems
    • doi:10.9307/2006422
    • A. Brandt, "Multi-level adaptive solutions to boundary value problems," Math. Comput., vol. 31, pp. 333-390 (9771) doi:10.9307/2006422
    • (9771) Math. Comput. , vol.31 , pp. 333-390
    • Brandt, A.1
  • 70
    • 0001822668 scopus 로고
    • W. Hackbusch and U. Trottenberg, Eds., Springer Lecture Notes in Mathematics No. 960 (Springer-Verlag, New York)
    • K. Stuben and U. Trottenberg, in Multigrid Methods, W. Hackbusch and U. Trottenberg, Eds., Springer Lecture Notes in Mathematics No. 960 (Springer-Verlag, New York, 1982), pp. 1-176.
    • (1982) Multigrid Methods , pp. 1-176
    • Stuben, K.1    Trottenberg, U.2
  • 71
    • 0004246507 scopus 로고
    • W. Hackbusch and U. Trottenberg, Eds., Springer Lecture Notes in Mathematics No. 960 (Springer-Verlag, New York)
    • A. Brandt, in Multigrid Methods, W. Hackbusch and U. Trottenberg, Eds., Springer Lecture Notes in Mathematics No. 960 (Springer-Verlag, New York, 1982).
    • (1982) Multigrid Methods
    • Brandt, A.1
  • 77
    • 0014761135 scopus 로고
    • Computer Aided two-dimensional analysis of a planar type junction field-effect transistor
    • D. P. Kennedy and R. R. O'Brien, "Computer Aided two-dimensional analysis of a planar type junction field-effect transistor," IBM J. Res. Dev., vol. 4 (1970).
    • (1970) IBM J. Res. Dev. , vol.4
    • Kennedy, D.P.1    O'Brien, R.R.2
  • 78
    • 0014642598 scopus 로고
    • Iterative scheme for 1 and 2-dimensional d.c. transistor simulation
    • J. W. Slotboom, "Iterative scheme for 1 and 2-dimensional d.c. transistor simulation," Electron. Lett., vol. 5, pp. 677-678 (1969).
    • (1969) Electron. Lett. , vol.5 , pp. 677-678
    • Slotboom, J.W.1
  • 79
    • 35949006799 scopus 로고
    • Yoshii 3D device simulations
    • N. Sano and A. Yoshii, "Yoshii 3D device simulations," Phy. Rev. B, vol. 45, p. 4171 (1992).
    • (1992) Phy. Rev. B , vol.45 , pp. 4171
    • Sano, N.1    Yoshii, A.2
  • 80
    • 0025457187 scopus 로고
    • Monte Carlo analysis of semiconductor devices: The DAMOCLES program
    • S. E. Laux, M. V. Fischetti, and D. J. Frank, "Monte Carlo analysis of semiconductor devices: The DAMOCLES program," IBM J. Res. Dev., vol. 34, pp. 466-494 (1990).
    • (1990) IBM J. Res. Dev. , vol.34 , pp. 466-494
    • Laux, S.E.1    Fischetti, M.V.2    Frank, D.J.3
  • 81
    • 0004022746 scopus 로고    scopus 로고
    • Silvaco International, Santa Clara, CA
    • Silvaco International, Santa Clara, CA, ATLAS User's Manual, Ed. 6, 1998.
    • (1998) ATLAS User's Manual, Ed. 6
  • 82
    • 35949025517 scopus 로고
    • doi:10.1103/RevModPhys.55.645
    • C. Jacoboni and L. Reggiani, Rev. Mod. Phys., vol. 55, p. 645 (1983). doi:10.1103/RevModPhys.55.645
    • (1983) Rev. Mod. Phys. , vol.55 , pp. 645
    • Jacoboni, C.1    Reggiani, L.2
  • 87
    • 0001269324 scopus 로고
    • doi:10.1016/00223697(69)90018-3
    • H. D. Rees, J. Phys. Chem. Solids, vol. 30, p. 643 (1969) doi:10.1016/00223697(69)90018-3
    • (1969) J. Phys. Chem. Solids , vol.30 , pp. 643
    • Rees, H.D.1
  • 88
    • 0009406390 scopus 로고
    • doi:10.1016/0021-9991(86)900240
    • R. M. Yorston, J. Comp. Phys., vol. 64, p. 177 (1986) doi:10.1016/0021-9991(86)900240
    • (1986) J. Comp. Phys. , vol.64 , pp. 177
    • Yorston, R.M.1
  • 92
    • 33749399874 scopus 로고
    • doi:10.1103/PhygRevB.37.2178
    • S. M. Goodnick and P. Lugli, Phys. Rev. B, vol. 37, p. 2578 (1988). doi:10.1103/PhygRevB.37.2178
    • (1988) Phys. Rev. B , vol.37 , pp. 2578
    • Goodnick, S.M.1    Lugli, P.2
  • 93
  • 96
    • 3643114951 scopus 로고
    • doi:10.1103/PhysRevLett.56.1295
    • P. Lugli and D. K. Ferry, Phys. Rev. Lett., vol. 56, p. 1295 (1986). doi:10.1103/PhysRevLett.56.1295
    • (1986) Phys. Rev. Lett. , vol.56 , pp. 1295
    • Lugli, P.1    Ferry, D.K.2
  • 97
    • 0001249756 scopus 로고
    • doi:10.1103/PhysRevB.47.6316
    • J. F. Young and P. J. Kelly, Phys. Rev. B, vol. 47, p. 6316 (1993). doi:10.1103/PhysRevB.47.6316
    • (1993) Phys. Rev. B , vol.47 , pp. 6316
    • Young, J.F.1    Kelly, P.J.2
  • 99
    • 11644276026 scopus 로고
    • doi:10.1016/00219991(87)90076-3
    • D. J. Adams and G. S. Dubey, J. Comp. Phys., vol. 72, p. 156 (1987) doi:10.1016/00219991(87)90076-3
    • (1987) J. Comp. Phys. , vol.72 , pp. 156
    • Adams, D.J.1    Dubey, G.S.2
  • 100
    • 3643084435 scopus 로고
    • doi:10.1103/Phys.RevB.25.6310
    • Z. H. Levine and S. G. Louie, Phys. Rev. B, vol. 25, p. 6310 (1982). doi:10.1103/Phys.RevB.25.6310
    • (1982) Phys. Rev. B , vol.25 , pp. 6310
    • Levine, Z.H.1    Louie, S.G.2
  • 108
    • 84860017313 scopus 로고    scopus 로고
    • For a complete overview, see www.research.ibm.com/DAMOCLES.
  • 128
  • 134
    • 84912795642 scopus 로고
    • Multi-level adaptive technique (MLAT): The Multi-grid Method
    • IBM T. J. Watson Research Center, Yorktown Heights, New York
    • A. Brandt, "Multi-level adaptive technique (MLAT): The Multi-grid Method", IBM Research Report RD-6026, IBM T. J. Watson Research Center, Yorktown Heights, New York, 1976.
    • (1976) IBM Research Report , vol.RD-6026
    • Brandt, A.1
  • 135
    • 0016556609 scopus 로고
    • An O(N*N) method for solving constant coefficient boundary value problems in two dimensions
    • R. E. Bank and D. J. Rose, "An O(N*N) method for solving constant coefficient boundary value problems in two dimensions," SIAM J. Numer. Anal., vol. 12, pp. 529-540 (1975).
    • (1975) SIAM J. Numer. Anal. , vol.12 , pp. 529-540
    • Bank, R.E.1    Rose, D.J.2
  • 138
    • 0009509593 scopus 로고
    • Carrier mobilities in silicon empirically related to doping and field
    • D. M. Caughey R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field", Proc. IEEE, vol. 55, pp. 2192-2193 (1967).
    • (1967) Proc. IEEE , vol.55 , pp. 2192-2193
    • Caughey, D.M.1    Thomas, R.E.2
  • 139
    • 0020087475 scopus 로고
    • Electron and hole mobilities in silicon as a function of concentration and temperature
    • N. D. Arora, J. R. Hauser, and D. J. Roulston, "Electron and hole mobilities in silicon as a function of concentration and temperature," IEEE Trans. Electron. Devices, vol. 29, pp. 292-295 (1982).
    • (1982) IEEE Trans. Electron. Devices , vol.29 , pp. 292-295
    • Arora, N.D.1    Hauser, J.R.2    Roulston, D.J.3
  • 140
    • 0019608025 scopus 로고
    • Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level
    • doi:10.1016/0038-1101(81)90097-6
    • J. M. Dorkel and PH. Leturcq, "Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level", Solid State Electron., vol. 24, pp. 821-825 (1981) doi:10.1016/0038-1101(81)90097-6
    • (1981) Solid State Electron. , vol.24 , pp. 821-825
    • Dorkel, J.M.1    Leturcq, P.H.2
  • 141
    • 0026899612 scopus 로고
    • A unified mobility model for device simulation - I. Model equations and concentration dependence
    • doi:10.1016/0038-1101(92)90325-7
    • D. B. M. Klaassen, "A unified mobility model for device simulation - I. Model equations and concentration dependence," Solid State Electron., vol. 35, pp. 953-959 (1992). doi:10.1016/0038-1101(92)90325-7
    • (1992) Solid State Electron. , vol.35 , pp. 953-959
    • Klaassen, D.B.M.1
  • 143
    • 0024105667 scopus 로고
    • A physically based mobility model for numerical simulation of nonplanar devices
    • C. Lombardi, S. Manzini, A. Saporito, and M. Vanzi, "A physically based mobility model for numerical simulation of nonplanar devices," IEEE Trans. Comp. -Aided Design, vol. 7, pp. 1154-1171 (1992).
    • (1992) IEEE Trans. Comp. -Aided Design , vol.7 , pp. 1154-1171
    • Lombardi, C.1    Manzini, S.2    Saporito, A.3    Vanzi, M.4
  • 144
    • 0018491058 scopus 로고
    • Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's
    • Ken Yamaguchi, "Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's," IEEE Trans. Electron Devices, vol. 26, pp. 1068-1074 (1979).
    • (1979) IEEE Trans. Electron Devices , vol.26 , pp. 1068-1074
    • Yamaguchi, K.1
  • 145
    • 0025503170 scopus 로고
    • A universal MOSFET mobility degradation model for circuit simulation
    • doi:10.1109/43.62736
    • G. M. Yeric, A. F. Tasch, and S. K. Banerjee, "A universal MOSFET mobility degradation model for circuit simulation", IEEE Trans. Computer-Aided Design, vol. 9, p. 1123 (1991) doi:10.1109/43.62736
    • (1991) IEEE Trans. Computer-Aided Design , vol.9 , pp. 1123
    • Yeric, G.M.1    Tasch, A.F.2    Banerjee, S.K.3
  • 146
    • 0009509593 scopus 로고
    • Carrier mobilities in silicon empirically related to doping and field
    • D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field", Proc. IEEE, vol. 55, pp. 2192-2193 (1967).
    • (1967) Proc. IEEE , vol.55 , pp. 2192-2193
    • Caughey, D.M.1    Thomas, R.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.