Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering

Diamond and Related Materials

Volumn 16, Issue 1, 2007, Pages 29-36

  Houska J ^a   Vlcek J ^a   Potocky S ^a   Perina V ^b  

^a UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

^b NUCLEAR PHYSICS INSTITUTE   (Czech Republic)

Author keywords

Elemental composition; Magnetron co sputtering; Mechanical and electrical properties; Silicon boron carbon nitrogen films; Surface bonding structure

Indexed keywords

ELASTIC MODULI; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GLASS; MATHEMATICAL MODELS; SEMICONDUCTING FILMS; STRESS ANALYSIS; SUBSTRATES; THERMAL EFFECTS;

ELEMENTAL COMPOSITION; MAGNETRON CO SPUTTERING; SILICON BORON CARBON NITROGEN FILMS; SURFACE BONDING STRUCTURE;

MAGNETRON SPUTTERING;

EID: 33751239453     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.03.012     Document Type: Article

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