The sub-micrometer thickness n-InSb/i-GaAs epilayers for magnetoresistor applications at room temperatures of operation

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 20, Issue 3-4, 2004, Pages 523-526

  Mironov, O A ^a,b   Myronov, M ^a   Durov, S ^a   Igumenov, V T ^c   Konstantinov, V M ^c   Paramonov, V V ^c   Zhang, T ^d   Cohen, L F ^d  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b INTERNATIONAL LABORATORY OF HIGH MAGNETIC FIELDS AND LOW TEMPERATURES   (Poland)

^c Institute for Electronic Materials   (Russian Federation)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Low frequency noise; Magnetoresistor; Magnetotransport; n InSb i GaAs

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; HALL EFFECT; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SENSORS; SIGNAL TO NOISE RATIO;

HALL SENSORS; MAGNETORESISTIVE SENSORS;

MAGNETORESISTANCE;

EID: 0347758812     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.09.002     Document Type: Conference Paper

References (7)

1. Lenssen K.-M.H., Adelerhof D.J., Gassen H.J., Kupier A.E.T., Somers G.H.J., van Zon J.B.A.D. Sensors Actuators. 85:2000;1.
2. Daughton J.M. J. Magn. Magn. Mater. 192:1999;334.
3. Solin S.A., Thio T., Hines D.R., Heremans J.J. Science. 289:2000;1530.
4. O.A. Mironov, V.T. Igumenov, V.M. Konstantinov, L. Dobrzanski, A. Gilewski, T. Palewski, J. Klamut, D. Poplavskyy, M.L. Hsieh, R.A. Stradling, Magnetotransport and Raman characterization of n-InSb/i-GaAs epilayers, for Hall sensors applications over extremely wide ranges of temperature and magnetic field, Proc. 10th Intern. Conf. on Narrow Gap Semiconductors, IPAP Conference Series 2, IPAP, Tokyo, 2001, pp. 151-154.
5. Hooge F. Physica B. 83:1976;14.
6. Jevtic M.M., Stanimirovic Z., Stanimirovic I. Microelectron. Reliab. 41:2001;59.
7. M.L. Hsieh, R.A. Stradling, O.A. Mironov, LO phonon-plasmon coupling for contactless evaluation of n-InSb epilayers, Proc. 10th Intern. Conf. on Narrow Gap Semiconductors, IPAP Conference Series 2, IPAP, Tokyo, 2001, pp. 158-160.