Slow decay of excess carrier concentration in bonded silicon-on-insulator wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 A, 2000, Pages 6513-6514

  Hirano, Masashi ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bonded SOI; Carrier lifetime; Temperature dependence; Trap

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; PHOTOCONDUCTIVITY; REACTION KINETICS; SILICON WAFERS; THERMAL EFFECTS;

CARRIER LIFETIME;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034472705     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6513     Document Type: Article

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