Study of interface states of directly bonded silicon-on-insulator structures

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 107-111

  Buldygin, S A ^a   Golod, S V ^a   Kamaev, G N ^a   Skok, E M ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BONDING; CRYSTAL DEFECTS; ELECTRON TRAPS; HOLE TRAPS; INTERFACES (MATERIALS); PHOTOCONDUCTIVITY; SILICON ON INSULATOR TECHNOLOGY;

CARRIER CAPTURE CROSS SECTIONS; CARRIER TRAPPING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033907942     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00657-0     Document Type: Article

References (7)

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2. S.A. Buldygin, S.V. Golod, G.N. Kamaev, E.M. Skok, D.G. Tarlo, Institute of Physics Conference Series No. 160, Paper presented at DRIP 97, pp. 277-280.
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