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Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 107-111

Excess carrier lifetime measurements for GaN on sapphire substrates with various doping concentrations and surface conditions by the microwave photoconductivity decay method

(4) Kato, Masashi a Watanabe, Hideki a Ichimura, Masaya a Arai, Eisuke a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); ETCHING; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; OHMIC CONTACTS; PHOTOCONDUCTIVITY; SEMICONDUCTOR GROWTH; SURFACE TREATMENT;

CARRIER DECAY; ETCHING TREATMENT; MICROWAVE PHOTOCONDUCTIVITY DECAY METHOD; SAPPHIRE SUBSTRATES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 23844503913 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

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