Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer

Journal of Non-Crystalline Solids

Volumn 352, Issue 52-54, 2006, Pages 5463-5468

  Xu, M ^a,b   Xu, S ^b   Huang, S Y ^b   Chai, J W ^b   Long, J D ^b  

^a SICHUAN NORMAL UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Luminescence; Silicon

Indexed keywords

ADDITION REACTIONS; ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; NICKEL; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURE; GAS MIXTURE; NANOPARTICLE FILMS; NICKEL BUFFER;

THIN FILMS;

EID: 33751196128     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.09.010     Document Type: Article

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