Fabrication of a high-TC superconducting field effect transistor by ion beam sputtering

IEEE Transactions on Applied Superconductivity

Volumn 7, Issue 2 PART 3, 1997, Pages 3528-3531

  Saito, Tatsuya ^a   Cai, Xuyang ^a   Usami, Kouichi ^a   Kobayashi, Tadayuki ^a   Goto, Toshinari ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRODES; HIGH TEMPERATURE SUPERCONDUCTORS; ION BEAMS; LEAKAGE CURRENTS; OXIDE SUPERCONDUCTORS; PERMITTIVITY; SPUTTER DEPOSITION; SUPERCONDUCTING FILMS; X RAY DIFFRACTION ANALYSIS;

ION BEAM SPUTTERING; SUPERCONDUCTING FIELD EFFECT TRANSISTORS;

SUPERCONDUCTING DEVICES;

EID: 0031162389     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.622155     Document Type: Article

References (7)

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