Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties

IEE Proceedings: Optoelectronics

Volumn 150, Issue 1, 2003, Pages 64-67

  Blanc, S ^a   Arnoult, A ^a   Carrere H ^a   Bedel, E ^a   Lacoste, G ^a   Fontaine, C ^a   Cabie M ^b   Ponchet, A ^b   Rocher, A ^b  

^a LAAS CNRS   (France)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NITROGEN; OPTICAL PROPERTIES; PHOTODIODES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

DILUTE NITRIDES; RED SHIFT; SEMICONDUCTING GALLIUM INDIUM NITROGEN ARSENIDE;

NITRIDES;

EID: 0037307176     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030039     Document Type: Article

References (7)

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