Band structure investigations of GaN films using modulation spectroscopy

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 246-248

  Makhniy, V P ^a   Slyotov, M M ^a   Gorley, V V ^a   Horley, P P ^a   Vorobiev, Yu V ^b   Gonzalez Hernandez J ^c  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS   (Mexico)

Author keywords

GaN films; Modulation spectroscopy; Photoluminescence spectra

Indexed keywords

BAND STRUCTURE; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SPECTROSCOPIC ANALYSIS;

ACCEPTORS; DONORS; MODULATION SPECTROSCOPY; PHOTOLUMINESCENCE SPECTRA;

THIN FILMS;

EID: 33751112773     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.075     Document Type: Article

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