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Volumn 100, Issue 9, 2006, Pages

Characteristics of InGaPN/GaAs heterostructures investigated by photoreflectance spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

EID: 33751082630     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358327     Document Type: Article
Times cited : (5)

References (25)
  • 7
    • 0034593769 scopus 로고    scopus 로고
    • Proceedings 2000 IEEE/Cornell University Conference on High Performance Devices, Piscataway, NJ
    • R. J. Welty, Y. G. Hong, H. P. Xin, K. Mochizuki, C. W. Tu, and P. M. Asbeck, Proceedings 2000 IEEE/Cornell University Conference on High Performance Devices, Piscataway, NJ, 2000, pp. 33-40.
    • (2000) , pp. 33-40
    • Welty, R.J.1    Hong, Y.G.2    Xin, H.P.3    Mochizuki, K.4    Tu, C.W.5    Asbeck, P.M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.