Issues and optimization of millisecond anneal process for 45 nm node and beyond

Materials Research Society Symposium Proceedings

Volumn 912, Issue , 2006, Pages 149-158

  Adachi, Kanna ^a   Ohuchi, Kazuya ^a   Aoki, Nobutoshi ^a   Tsujii, Hideji ^a   Ito, Takayuki ^a   Itokawa, Hiroshi ^a   Matsuo, Koji ^a   Yoshinori, Honguh ^a   Tamaoki, Naoki ^a   Ishimaru, Kazunari ^a   Ishiuchi, Hidemi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LASER APPLICATIONS; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS;

FLASH LAMP ANNEALING (FLA); LASER SPIKE ANNEALING (LSA); PATTERN DEPENDENCE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33751050927     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0912-c04-06     Document Type: Conference Paper

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