Thermally stimulated current observation of trapping centers in an undoped Tl4Ga3InSe8 layered single crystal

Crystal Research and Technology

Volumn 41, Issue 11, 2006, Pages 1100-1105

  Gasanly, N M ^a,b   Mogaddam, N A P ^a   Ozkan, H ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b BAKU STATE UNIVERSITY   (Azerbaijan)

Author keywords

Chalcogenides; Defects; Electrical properties; Semiconductors

Indexed keywords

CRYSTAL GROWTH; ELECTRON TRAPS; SEMICONDUCTOR DOPING; THALLIUM COMPOUNDS; THERMAL EFFECTS;

CHALCOGENIDES; THERMALLY STIMULATED CURRENT MEASUREMENTS;

SINGLE CRYSTALS;

EID: 33751041164     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200610729     Document Type: Article

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