Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals

Crystal Research and Technology

Volumn 41, Issue 8, 2006, Pages 822-828

  Goksen, K ^a   Gasanly, N M ^a   Turan, R ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Optical properties; Photoluminescence; Semiconductors; X ray diffraction

Indexed keywords

BAND STRUCTURE; ELECTRIC EXCITATION; LIGHT ABSORPTION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION;

CONDUCTION BAND; EMISSION BAND; SHALLOW ACCEPTOR; VALENCE BAND;

CRYSTAL GROWTH;

EID: 33747189828     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200510677     Document Type: Article

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