Relationships between dielectric breakdown resistance and charge transport in alumina materials-Effects of the microstructure

Journal of the European Ceramic Society

Volumn 27, Issue 2-3, 2007, Pages 1193-1197

  Touzin, M ^a   Goeuriot, D ^a   Fitting, H J ^b   Guerret Piecourt C ^c   Juve D ^c   Treheux D ^c  

^a LCG   (France)

^b UNIVERSITY OF ROSTOCK   (Germany)

^c LABORATOIRE DE TRIBOLOGIE ET DYNAMIQUE DES SYSTÈMES   (France)

Author keywords

Al2O3; Dielectric properties; Grain boundaries; Interfaces

Indexed keywords

CHARGE INJECTION; DIELECTRIC BREAKDOWN; INSULATOR DEGRADATION; SCANNING ELECTRON MICROSCOPY MIRROR EFFECT (SEMME);

CHARGE TRANSFER; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC INSULATORS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; ITERATIVE METHODS; SCANNING ELECTRON MICROSCOPY;

ALUMINA;

ALUMINA; CHARGE TRANSFER; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC INSULATORS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; ITERATIVE METHODS; SCANNING ELECTRON MICROSCOPY;

EID: 33751016764     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2006.05.047     Document Type: Article

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